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 MP4304
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
MP4304
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
* * * *
Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 80 7 3 5 0.5 2.2 Unit V V V A A W
JEDEC JEITA TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
PT Tj Tstg
4.4 150 -55 to 150
W C C
Array Configuration
2 3 4 9 10 11
1 6
5
8
12 7
1
2002-11-20
MP4304
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit
Rth (j-a)
28.4
C/W
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 80 V, IE = 0 A VEB = 7 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 15 mA IC = 1.5 A, IB = 15 mA VCE = 2 V, IC = 0.1 A VCB = 10 V, IE = 0 A, f = 1 MHz Min 80 80 600 150 Typ. 0.25 85 50 0.4 Max 10 10 0.5 1.2 Unit A A V V
Saturation voltage
V MHz pF
Transition frequency Collector output capacitance Turn-on time
IB1 IB2
Output 20
2.6
s
IB2
VCC = 30 V 1.3
Fall time
tf IB1 = -IB2 = 15 mA, duty cycle 1%
Flyback-Diode Rating and Characteristics (Ta = 25C)
Characteristics Maximum forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 80 V IR = 100 A IF = 1 A Test Condition Min 80 Typ. Max 3 0.4 1.5 Unit A A V V
2
2002-11-20
MP4304
IC - VCE
3 20 2.5 10 5 Common emitter 2.8 Ta = 25C 2 3.2 Common emitter VCE = 1 V
IC - VBE
(A)
(A) IC Collector current
2.4 2.0 1.6 Ta = 100C 1.2 0.8 0.4 0 0 25 -55
Collector current
IC
2
1.5 1 1 IB = 0.5 mA
0.5
0 0
1
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-emitter voltage
VCE
(V)
Base-emitter voltage VBE
(V)
hFE - IC
3000 0.5 100
VCE - IB
Common emitter
(V)
Ta = 25C 0.4
hFE
Ta = -55C 300
DC current gain
Collector-emitter voltage
VCE
1000
25
0.3 IC = 3 A 0.2 2 0.1 1 0.5 0.1 0 0.3 1 3 10 30 100 300 1000
100 Common emitter VCE = 1 V 30 0.01 0.03 0.1 0.3 1 3
Collector current
IC
(A)
Base current
IB
(mA)
VCE (sat) - IC
3
VBE (sat) - IC
10
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter
Base-emitter saturation voltage VBE (sat) (V)
1 0.5 0.3
IC/IB = 100
Common emitter 5 3 IC/IB = 100
1 0.5 0.3
Ta = -55C 25 100
0.1 0.05 0.03 0.01 0.03 Ta = 100C -55 0.1 25
0.3 0.5
1
3
5
0.1 0.01
0.03
0.1
0.3 0.5
1
3
5
Collector current
IC
(A)
Collector current
IC
(A)
3
2002-11-20
MP4304
rth - tw
Curves should be applied in thermal limited area. Below figure show thermal resistance per 1 unit versus pulse width. This curve is obtained by using single nonrepetitive pulse with no heat sink and attached on a circuit board. (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation
(C/W)
(3)
(4)
100
rth
(1) (2)
Transient thermal resistance
10
1 Circuit board 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe Operating Area
30 8
PT - Ta
Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation (4) 4 (3) (2) 2 (1) Circuit board
(W)
10
5
IC max (pulsed)* 1 ms* 10 ms* 100 s*
Collector current
IC
(A)
3
Total power dissipation
PT
6
1
0 0
40
80
120
160
200
Ambient temperature Ta (C)
0.5
0.3
*: Single nonrepetitive pulse Ta = 25C 0.1 Curves must be derated linearly with increase in temperature. 10 30 50 100 200
Tj - PT
VCEO max 160
Channel temperature increase Tj
Collector-emitter voltage VCE
(V)
(C)
0.05 5
(1) 120
(2) (3) (4)
80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 2 4 6 8 10
0 0
Total power dissipation
PT
(W)
4
2002-11-20
MP4304
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
5
2002-11-20


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